Daniel Cole

Multiscale mechanics modeling of direct silicon wafer bonding

Dhirendra V. Kubair,1 Daniel J. Cole,2 Lucio Colombi Ciacchi,3,4 S. Mark Spearing5

1Computational Dynamic Fracture Mechanics Laboratory, Department of Mechanical and Aerospace Engineering, Utah State University, Logan, UT 84322-4130, USA
2Theory of Condensed Matter Group, Cavendish Laboratory, Cambridge CB3 0HE, UK
3Hybrid Materials Interfaces Group, Faculty of Production Engineering and Bremen Centre for Computational Materials Science, University of Bremen, D-28359 Bremen, Germany
4Fraunhofer Institute for Production Technology and Applied Material Research IFAM, D-28359 Bremen, Germany
5Engineering Materials Group, School of Engineering Sciences, University of Southampton, Hampshire SO17 1BJ, UK

The direct bonding of macroscopically patterned silicon wafers is studied with a cohesive zone model (CZM), the form and key parameters of which are obtained from molecular dynamics simulations. The CZM is implemented in a spectral scheme. For the case of ideally flat wafer surfaces investigated here, the results are consistent with previous work in which the CZM was derived from an assumption of a continuum water film. This multiscale approach has the potential to model directly the effects of surface roughness, nanotopography and small-scale patterning on the efficacy of direct wafer bonding.

Scripta Materialia 60, 1125 (2009)